CHARACTERIZATION OF VACUUM-EVAPORATED TIN SULFIDE FILM FOR SOLAR-CELLMATERIALS

Tin sulfide (SnS) films were prepared by vacuum evaporation. As-grown SnS films showed p-type conduction with a resistivity of 13 similar to 20 Omega cm, a carrier density of 6.3 x 10(14) - 1.2 x 10(15) cm(-3), and a Hall mobility of 400 similar to 500 cm(2)/Vs. The absorption co efficients of the films were an order of 10(4) cm(-1) at the fundament al absorption edge. The n-CdS/p-SnS heterojunctions were made by depos iting n-CdS, p-SnS and Ag ohmic electrode on the transparent electrode (indium-tin oxide, ITO) in the order ITO/n-CdS/p-SnS/Ag structure. Th e photovoltaic properties of a short-circuit current of 7 mA/cm(2), an open-circuit voltage of 0.12 V, a fill factor of 0.35, and a conversi on efficiency of 0.29% were obtained under the illumination of 100 W/c m(2).