ZN3P2 PHOTOVOLTAIC FILM GROWTH FOR ZN3P2 ZNSE SOLAR-CELL/

Zinc phosphide (Zn3P2) thin films have been grown by photo-metalorgani c chemical vapor deposition (photo-MOCVD) and also MOCVD onto n-type Z nSe single crystal aiming at p-Zn3P2/n-ZnSe solar cells. A good diode characteristic was observed in p-Zn3P2/n-ZnSe heterojunctions fabricat ed with annealing in hydrogen at 400 degrees C. An open-circuit voltag e (V-OC) of 0.4-0.5 V, a fill factor of 0.6, and a short-circuit curre nt of 2-9 mu A/cm(2) were obtained under simulated air mass 1.5 illumi nation without anti-reflective coating. One of the reason with this sm all short-circuit current is the high resistivity and ohmic contact pr oblem of ZnSe. A spectral response of V-OC indicates a good band-pass behavior of the heterojunction between 1.5 and 2.7 eV, which are bandg aps of Zn3P2 and ZnSe, respectively.