FABRICATION AND CHARACTERIZATION OF FREELY POSITIONABLE SILICON-ON-SAPPHIRE PHOTOCONDUCTIVE PROBES

Authors
PFEIFER T HEILIGER HM VONKAMIENSKI ES ROSKOS HG KURZ H
Citation
T. Pfeifer et al., FABRICATION AND CHARACTERIZATION OF FREELY POSITIONABLE SILICON-ON-SAPPHIRE PHOTOCONDUCTIVE PROBES, Journal of the Optical Society of America. B, Optical physics, 11(12), 1994, pp. 2547-2552
Citations number
27
Categorie Soggetti
Optics
Journal title
Journal of the Optical Society of America. B, Optical physics → ACNP
ISSN journal
07403224
Volume
11
Issue
12
Year of publication
1994
Pages
2547 - 2552
Database
ISI
SICI code
0740-3224(1994)11:12<2547:FACOFP>2.0.ZU;2-4
Abstract
A study of external photoconductive sampling is reported. We describe in detail the fabrication of photoconductive probes on silicon-on-sapp hire Measurements of electric pulse propagation on terahertz-dipole an tennas serve to characterize the linearity, the sensitivity, the time resolution, and the dielectric invasiveness of the probes.