USE OF THE SILICON-CRYSTALS PHOTOLUMINESCENCE TO CONTROL IMMUNOCOMPLEX FORMATION

The fluorescence of porous silicon obtained by a special procedure usi ng chemical and laser beam treatment of silicon crystal was investigat ed in water, buffer and a solution containing sodium chloride. It was demonstrated that the intensity of the fluorescence did not practicall y change under the above mentioned conditions as well as after antigen or antibody immobilization on the porous silicon surface. But this pa rameter of the fluorescence dramatically decreased in the case of spec ific immune complex formation on the silicon surface. The level of flu orescence extinguishing depended on the duration and intensity of the immune reaction. It is proposed to use this effect for creation of imm unosensors based on direct registration of immune complex formation.