T. Marek et al., THE AS-GROWN SIC(0001) SURFACE AS OBSERVED BY REFLECTION ELECTRON-MICROSCOPY, Crystal research and technology, 31(8), 1996, pp. 1001-1005
Reflection electron microscopy (REM), capable of imaging surfaces in h
igh resolution, reveals that the risers and treads in the terrace grow
th surfaces of vapor grown SiC(0001) bulk crystals are characterized o
n a microscopic scale by growth steps. At the risers microscopic growt
h occurs by the 'step now mode'. At the treads, growth occurs by islan
d formation and by operation of growth spirals.