THE AS-GROWN SIC(0001) SURFACE AS OBSERVED BY REFLECTION ELECTRON-MICROSCOPY

Authors
MAREK T HEINDL J STRUNK HP ECKSTEIN R HOFMANN D
Citation
T. Marek et al., THE AS-GROWN SIC(0001) SURFACE AS OBSERVED BY REFLECTION ELECTRON-MICROSCOPY, Crystal research and technology, 31(8), 1996, pp. 1001-1005
Citations number
11
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
31
Issue
8
Year of publication
1996
Pages
1001 - 1005
Database
ISI
SICI code
0232-1300(1996)31:8<1001:TASSAO>2.0.ZU;2-4
Abstract
Reflection electron microscopy (REM), capable of imaging surfaces in h igh resolution, reveals that the risers and treads in the terrace grow th surfaces of vapor grown SiC(0001) bulk crystals are characterized o n a microscopic scale by growth steps. At the risers microscopic growt h occurs by the 'step now mode'. At the treads, growth occurs by islan d formation and by operation of growth spirals.