DEGRADATION IN ON-STATE CHARACTERISTICS OF IGBTS THROUGH SELF-HEATING

Authors
HU ZR MAWBY PA TOWERS MS BOARD K ZENG J
Citation
Zr. Hu et al., DEGRADATION IN ON-STATE CHARACTERISTICS OF IGBTS THROUGH SELF-HEATING, IEE proceedings. Circuits, devices and systems, 141(6), 1994, pp. 439-444
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEE proceedings. Circuits, devices and systems → ACNP
ISSN journal
13502409
Volume
141
Issue
6
Year of publication
1994
Pages
439 - 444
Database
ISI
SICI code
1350-2409(1994)141:6<439:DIOCOI>2.0.ZU;2-B
Abstract
Numerical studies of thermal effects on the on-state characteristics o f IGBTs have been carried out using two-dimensional simulation. A disc retisation scheme suitable for electrothermal modelling of semiconduct or devices has been derived. The coupled Poisson's equation and contin uity equations together with the heat flow equation are solved self-co nsistently. The simulation results show that the on-resistance and hen ce current handling capability of IGBTs can be significantly degraded by their self-heating.