2-DIMENSIONAL MODELING OF A LATERAL MAGNETOTRANSISTOR

The operation of a dual-collector n-p-n lateral magnetotransistor has been simulated in two dimensions using the finite-difference method. T he results obtained support the physical model, according to which the main mechanism responsible for the device's sensitivity is the deflec tion of the minority carriers injected into the base by the Lorentz fo rce. The calculations show that the dependence between the transistor' s response and the magnetic field is linear. The complicated nature of the galvanomagnetic effects has been demonstrated by comparing the Ha ll-voltage values and the magnetosensitivity in an interval of injecti on levels corresponding to emitter voltages between - 0.55 and - 0.7 V .