PHOTOELECTRIC AND ELECTRICAL-PROPERTIES OF ZN1-XMGXTE ALLOYS

Authors
MANSOUR BA RIAD MA DEMIAN SE SHABAN H
Citation
Ba. Mansour et al., PHOTOELECTRIC AND ELECTRICAL-PROPERTIES OF ZN1-XMGXTE ALLOYS, Indian Journal of Pure & Applied Physics, 32(12), 1994, pp. 940-944
Citations number
NO
Categorie Soggetti
Physics
Journal title
Indian Journal of Pure & Applied Physics → ACNP
ISSN journal
00195596
Volume
32
Issue
12
Year of publication
1994
Pages
940 - 944
Database
ISI
SICI code
0019-5596(1994)32:12<940:PAEOZA>2.0.ZU;2-I
Abstract
The kinetics of photocnductivity (PC) of undoped and p-doped Zn1-xMgxT e alloys (0 less than or equal to x less than or equal to 0.4) has bee n determined by their frequency dependence and relaxation. The electri cal conductivity of undoped, Li- and p-doped samples was also measured as a function of temperature in the range 100-300K. At room temperatu re, a and p (conductivity and. hole concentration) decrease while mu(H ) (Hall mobility) does not vary with increasing x. The results are dis cussed taking into account the alloying effect and random distribution of impurities.