ROOM-TEMPERATURE CHEMICAL-DEPOSITION OF BISMUTH TRISULFIDE THIN-FILMS

Authors
DESAI JD LOKHANDE CD
Citation
Jd. Desai et Cd. Lokhande, ROOM-TEMPERATURE CHEMICAL-DEPOSITION OF BISMUTH TRISULFIDE THIN-FILMS, Indian Journal of Pure & Applied Physics, 32(12), 1994, pp. 964-967
Citations number
NO
Categorie Soggetti
Physics
Journal title
Indian Journal of Pure & Applied Physics → ACNP
ISSN journal
00195596
Volume
32
Issue
12
Year of publication
1994
Pages
964 - 967
Database
ISI
SICI code
0019-5596(1994)32:12<964:RCOBTT>2.0.ZU;2-F
Abstract
An aqueous room temperature chemical method for deposition of large ar ea Bi2S3 thin films has been developed. Ethylene diamine tetraacetic a cid is used as complexing agent. The film characterisations with X-ray diffractogram, scanning electron microscopic, optical absorption, ele ctrical resistivity and inductively coupled plasma atomic emission spe ctroscopic techniques are carried out. A reaction mechanism is propose d for film formation in alkaline bath.