PULSED-LASER ABLATION SYNTHESIS OF NBNX LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1.3) THIN-FILMS

Authors
TREECE RE HORWITZ JS CHRISEY DB DONOVAN EP QADRI SB
Citation
Re. Treece et al., PULSED-LASER ABLATION SYNTHESIS OF NBNX LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1.3) THIN-FILMS, Chemistry of materials, 6(12), 1994, pp. 2205-2207
Citations number
32
Categorie Soggetti
Chemistry Physical","Material Science
Journal title
Chemistry of materials → ACNP
ISSN journal
08974756
Volume
6
Issue
12
Year of publication
1994
Pages
2205 - 2207
Database
ISI
SICI code
0897-4756(1994)6:12<2205:PASONL>2.0.ZU;2-Z
Abstract
Reactive pulsed laser deposition has been used to control the composit ion and phase of niobium nitride (NbN(x)) films deposited from a Nb ta rget in a N2 (90%)/H2 (10%) atmosphere onto MgO (100) substrates. The nitrogen content of the NbN(x) (0 less-than-or-equal-to x less-than-or -equal-to 1.3) films increased with gas pressure. The assignments of t he single-phase films of oriented Nb, Nb2N, NbN, and Nb3N4 were based on X-ray diffraction, Rutherford backscattering spectroscopy, and temp erature-dependent resistivity measurements.