CRYSTAL ORIENTATION AND NEAR-INTERFACE STRUCTURE OF CHEMICALLY VAPOR-DEPOSITED MOS2 FILMS

Crystalline MoS2 films were deposited on Si and graphite substrates us ing MoF6 and H2S as precursors. The crystal orientation and near-inter face structure of the MoS2 films were studied using transmission elect ron microscopy. In general, the preferred orientation of the (002) bas al planes of the MoS2 films with respect to the substrate surface chan ged from parallel to perpendicular with increased deposition temperatu re from 320 to 430 degrees-C. At 430 degrees-C, the basal planes were primarily oriented perpendicular to the Si substrate, except for the p resence of a approximately 5 nm interface region in which the basal pl anes were oriented in the parallel direction. The formation of this tr ansitional region was also observed on the graphite substrate.