FORMATION OF HIGHLY ORIENTED DIAMOND FILM ON CARBURIZED (100)SI SUBSTRATE

Highly oriented diamond film was grown on a (100) Si substrate by a bi as-enhanced microwave-plasma chemical vapor deposition. The Si surface was carburized at a faster rate by bias treatment than by carburizati on alone, but the initial carburization stage was indispensable. Durin g the bias treatment, the flat surface was changed to a textured struc ture on the nanometer scale. The formation of this structure was requi red for the synthesis of a highly oriented diamond film. Diamond micro crystals formed subsequently were irregular and of a few to a few tens nanometers in size. They then grew to oriented film in the following growth process.