A NOVEL EFFECTIVE-CHANNEL-LENGTH EXTERNAL-RESISTANCE EXTRACTION METHOD FOR SMALL-GEOMETRY MOSFETS

A novel effective channel length extraction method has been developed, which utilizes the difference between the local threshold voltage of channel region and that of external region. In this method, the depend ence of external resistance on V-g is taken into account, and it is no t necessary to extract V-th It is found that the external resistance c an be approximated as the linear function of V-g with V-g around V-th. For a 0.4 mu m gate length LDD MOSFET, the accuracy and resolution ar e estimated to be less than 0.02 mu m and 0.003 mu m, respectively.