TRANSISTOR PERFORMANCE AND ELECTRON-TRANSPORT PROPERTIES OF HIGH-PERFORMANCE INAS QUANTUM-WELL FETS

A novel field-effect transistor based on a pseudomorphic InAs quantum well in a doped InGaAs/InAlAs double heterostructure is reported. Low- field mobility, electron peak velocity, and transistor performance are studied as functions of InAs quantum well thickness, where the InAs l ayer is in the center of a 300-Angstrom uniformly doped InGaAs/lnAlAs quantum well lattice matched to InP. Electron transport-both at low an d high fields-along with transistor transconductance are optimal for s tructures with a 30-Angstrom InAs quantum well. Transistors based on t he InAs quantum well structures with 0.5-mu m gate lengths yielded roo m temperature extrinsic transconductances of 708 mS/mm, more than a 10 0% increase over those with no InAs.