A DYNAMIC THRESHOLD VOLTAGE MOSFET (DTMOS) FOR VERY-LOW VOLTAGE OPERATION

Authors
ASSADERAGHI F PARKE S SINITSKY D BOKOR J KO PK HU CM
Citation
F. Assaderaghi et al., A DYNAMIC THRESHOLD VOLTAGE MOSFET (DTMOS) FOR VERY-LOW VOLTAGE OPERATION, IEEE electron device letters, 15(12), 1994, pp. 510-512
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
15
Issue
12
Year of publication
1994
Pages
510 - 512
Database
ISI
SICI code
0741-3106(1994)15:12<510:ADTVM(>2.0.ZU;2-I
Abstract
A new mode of operation for Silicon-On-Insulator (SOI) MOSFET is exper imentally investigated. This mode gives rise to a Dynamic Threshold vo ltage MOSFET (DTMOS). DTMOS threshold voltage drops as gate voltage is raised, resulting in a much higher current drive than regular MOSFET at low V-dd. On the other hand, V-t is high at V-gs = 0, thus the leak age current is low. Suitability of this device for ultra low voltage o peration is demonstrated by ring oscillator performance down to V-dd = 0.5 V.