THE ELECTRICAL-PROPERTIES OF SUB-5-NM OXYNITRIDE DIELECTRICS PREPAREDIN A NITRIC-OXIDE AMBIENT USING RAPID THERMAL-PROCESSING

Ultrathin (<5 mn) dielectric films have been grown on [100] silicon us ing rapid thermal processing (RTP) in a nitric oxide (NO) ambient. Int erface state density, charge trapping properties, and interface state generation during Fowler-Nordheim electron injection have been investi gated. The films grown in NO have excellent electrical properties. The se properties are explained in terms of a much stronger and large numb er of Si-N bonds in both the bulk of the dielectric films and at the S i-SiO2 interface region. The leakage currents are at least three order s of magnitude lower than other reported results for similar thickness es. The dielectric films grown in NO ambient are viewed as promising t echnology for ultrathin dielectrics.