OH-RELATED CAPACITANCE-VOLTAGE RECOVERY EFFECT IN MOS CAPACITORS PASSIVATED BY PBO-B2O3-SIO2-GEO2 GLASSES - THE EFFECTS OF OH CONTENT

The purpose of this work is to clarify the relationship between some o f the properties of MOS capacitors passivated by lead borosilicate gla sses and the hydroxyl contents of the glasses. When PbO content decrea sed and network forming oxides such as B2O3, SiO2 and GeO2 increased, OH absorption coefficients increased and C-V curve shifts, V(G), in MO S capacitors increased. These effects were due to the increase of hydr oxyl contents, which depended on the lead borosilicate glass compositi ons. A good recovery effect in hysteresis loops was observed in MOS ca pacitors passivated by glasses with a small quantity of hydroxyl ions.