BAND OFFSETS AND CHEMICAL BONDING - THE BASIS FOR HETEROSTRUCTURE APPLICATIONS

The unifying concept underlying all heterostructure physics is the ide a that energy gap variations act as quasi-electric forces on the elect rons and holes in the structure, even in the absence of a true electri c field. They give the device designer a new degree of freedom in desi gning structures exhibiting phenomena fundamentally unobtainable in ho mostructures. A useful classification of heterostructures is by lineup type, distinguishing straddling, staggered and broken-gap lineups. Ex amples of each type are discussed. The possible combinations of two or more semiconductors into a heterostructure are constrained by bonding considerations, both with regard to bond length compatibility (lattic e matching) and valence compatibility. In quantized structures, strain may be a deliberate design element. The industrial impact of heterost ructure devices is likely to be dominated by the large economic system leverage they tend to provide, more than by manufacturing volumes app roaching those of mainstream silicon technology - with the possible ex ception of LEDs.