We describe the nanofabrication of the first three-dimensional (3-d) p
hotonic crystals with a forbidden photonic bandgap lying in the near i
nfrared region of the electromagnetic spectrum, 1.1 mu m < lambda < 1.
5 mu m, just beyond the electronic band-edge of GaAs. We fabricated th
ese structures by chemically assisted ion beam etching through a trian
gular hole array mask, defined by electron beam lithography on GaAs. T
he 3-d forbidden photonic bandgap was spectrally tuned by 2-d lithogra
phic control of the 3-d spatial periodicity. Optical transmission spec
tra were generally in good agreement with microwave frequency transmis
sion on centimeter scale models. Nevertheless, we find that the mid-ga
p optical reflectivity is surprisingly sensitive to structural errors
in the photonic crystal degrading the optical rejection from an expect
ed 95% to an observed 80%. We suggest that mid-gap attenuation in the
most vulnerable k-space directions, rather than overall thickness, is
the relevant Figure-of-Merit for nano-scale photonic crystals.