HIGH-TEMPERATURE CW OPERATION OF GAAS ALGAAS HIGH BARRIER GAIN OFFSETVCSELS/

Authors
CATCHMARK JM MORGAN RA ASOM MT GUTH GD MULLALLY MWFT CHRISTODOULIDES DN
Citation
Jm. Catchmark et al., HIGH-TEMPERATURE CW OPERATION OF GAAS ALGAAS HIGH BARRIER GAIN OFFSETVCSELS/, Electronics Letters, 30(25), 1994, pp. 2136-2138
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
25
Year of publication
1994
Pages
2136 - 2138
Database
ISI
SICI code
0013-5194(1994)30:25<2136:HCOOGA>2.0.ZU;2-A
Abstract
Greater than 150 degrees C CW lasing is achieved From an unbonded GaAs /AlGaAs VCSEL by employing high barrier confinement spacers and by blu e shifting the optical gain. This is done while maintaining a variatio n in threshold current of only +/-0.93mA over a range greater than 150 degrees C. These results are compared to a low barrier VCSEL of simil ar design.