IMPROVED REFLECTIVITY OF AIPSB GAPSB BRAGG REFLECTOR FOR 1.55 MU-M WAVELENGTH/

Authors
ANAN T SHIMOMURA H SUGOU S
Citation
T. Anan et al., IMPROVED REFLECTIVITY OF AIPSB GAPSB BRAGG REFLECTOR FOR 1.55 MU-M WAVELENGTH/, Electronics Letters, 30(25), 1994, pp. 2138-2139
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
25
Year of publication
1994
Pages
2138 - 2139
Database
ISI
SICI code
0013-5194(1994)30:25<2138:IROAGB>2.0.ZU;2-1
Abstract
A high-quality AlPSb/GaPSb Bragg reflector lattice matched to InP was grown by gas-source molecular beam epitaxy, and highly reflective DBR mirrors were obtained by improving both the layer flatness and the com positional uniformity. A reflectivity of over 99% was obtained at 1.6 mu m from a 20 pair AlPSb/GaPSb quarter-wave mirror, demonstrating the advantage of using this material system to fabricate long-wavelength surface-emitting lasers.