SEMICONDUCTOR PROPERTIES OF AG2O FILM FORMED ON THE SILVER ELECTRODE IN 1-M-NAOH SOLUTION

Authors
JIANG ZY HUANG SY QIAN B
Citation
Zy. Jiang et al., SEMICONDUCTOR PROPERTIES OF AG2O FILM FORMED ON THE SILVER ELECTRODE IN 1-M-NAOH SOLUTION, Electrochimica acta, 39(16), 1994, pp. 2465-2470
Citations number
32
Categorie Soggetti
Electrochemistry
Journal title
Electrochimica acta → ACNP
ISSN journal
00134686
Volume
39
Issue
16
Year of publication
1994
Pages
2465 - 2470
Database
ISI
SICI code
0013-4686(1994)39:16<2465:SPOAFF>2.0.ZU;2-2
Abstract
The semiconductor properties of the Ag2O film formed on silver electro des in 1 M NaOH solution have been investigated by a photoelectrochemi cal method. The bandgaps and flatband potential of the film were deter mined. The results of in situ Raman spectroscopy proved that the photo -oxidation process of Ag2O occurs at potentials higher than the flatba nd potential of 0.23 V vs. Hg/HgO, 1 M OH- electrode.