Zy. Jiang et al., SEMICONDUCTOR PROPERTIES OF AG2O FILM FORMED ON THE SILVER ELECTRODE IN 1-M-NAOH SOLUTION, Electrochimica acta, 39(16), 1994, pp. 2465-2470
The semiconductor properties of the Ag2O film formed on silver electro
des in 1 M NaOH solution have been investigated by a photoelectrochemi
cal method. The bandgaps and flatband potential of the film were deter
mined. The results of in situ Raman spectroscopy proved that the photo
-oxidation process of Ag2O occurs at potentials higher than the flatba
nd potential of 0.23 V vs. Hg/HgO, 1 M OH- electrode.