A NEW APPROACH TO BROAD-BAND MATCHING FOR P-I-N PHOTODIODES

Authors
ZHU ZM GILLON R VORST AV
Citation
Zm. Zhu et al., A NEW APPROACH TO BROAD-BAND MATCHING FOR P-I-N PHOTODIODES, Microwave and optical technology letters, 8(1), 1995, pp. 8-13
Citations number
NO
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Microwave and optical technology letters → ACNP
ISSN journal
08952477
Volume
8
Issue
1
Year of publication
1995
Pages
8 - 13
Database
ISI
SICI code
0895-2477(1995)8:1<8:ANATBM>2.0.ZU;2-4
Abstract
Microwave transmission-line theory has been applied to calculate p-i-n photodiode systems in which the carrier transit time, the geometric c onfiguration, and the transmission-line characteristics were considere d. The thickness of the intrinsic layer has been optimized to obtain a wide 3-dB bandwidth and a maximum gain-bandwidth product. A simulated result of 40-GHz bandwidth has been obtained for a device with a 20 x 20 mum2 p-i-n area. (C) 1995 John Wiley & Sons, Inc.