A STUDY OF STATIC RAM CELL USING THE LAMBDA-BIPOLAR-TRANSISTOR (LBT)

The bistable element of an SRAM cell, comprised the LBT in the common- collector configuration along with a couple of polysilicon resistors ( as proposed in the literature), has been studied. Under the present st udy a similar case has been visualized and studied with the LET in com mon-emitter configuration, and the stable points therein have been der ived. From the point of view of practical applications, the merits and demerits of either case have been highlighted and discussed. An impro ved method of reading the cell information has been proposed. Copyrigh t (C) 1996 Elsevier Science Ltd.