RESISTIVITY STUDY OF P-IMPLANTED, B-IMPLANTED, AND BF2-IMPLANTED POLYCRYSTALLINE SI1-XGEX FILMS WITH SUBSEQUENT ANNEALING

Thin polycrystalline Si1-xGex films with low resistivities have been a chieved by low pressure chemical vapor deposition (LPCVD) with subsequ ent ion implantation and thermal annealing. The sheet resistance decre ased drastically as the Ge content increased to 36 atomic percent. Eve n at a moderate dose of 1.5 x 10(15))/cm2, a resistivity of 8.3 x 10(- 4) OMEGA.cm was obtained for B+-doped samples and 3.8 x 10(-4) OMEGA.c m for P+-doped samples. Furthermore, stability of the resistivity valu es after sintering was confirmed. Poly-Si1-xGex can be used for new ap plications in Si LSIs such as fine-patterned MOS gates or germanosilic ide interconnects.