THIN-FILM POLYCRYSTALLINE SI SOLAR-CELL ON GLASS SUBSTRATE FABRICATEDBY A NOVEL LOW-TEMPERATURE PROCESS

Thin film polycrystalline Si solar cells on glass substrates were fabr icated by the excimer laser annealing of heavily boron doped a-Si and the subsequent deposition of polycrystalline Si on them by plasma-enha nced chemical vapor deposition at low temperature. The resistivity of the heavily boron doped laser annealed polycrystalline Si film is as l ow as 2 x 10(-4) OMEGA.cm. The structure of the solar cell presented h ere is ITO/n muc-Si:H (30 nm)/p poly-Si (2 mum)/p+ poly-Si (300 nm)/gl ass substrate, which shows reasonably high current density despite the low-temperature fabrication. The effective diffusion length of this s olar cell estimated from the evaluation of the inverse quantum efficie ncy is more than or equal to the thickness (2 mum) of the solar cell.