QUANTUM INTERFERENCE OF ELECTRON-WAVE IN METAL (COSI2) INSULATOR (CAF2) RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR STRUCTURE

We report the observation of multiple negative differential resistance (NDR) in nanometer-thick metal (CoSi2)/insulator (CaF2) resonant tunn eling hot electron transistor (RHET) grown on a silicon substrate. In this transistor, electrons from a resonant tunneling emitter with a 2. 2-nm-thick CoSi2 quantum well are transferred to the conduction band o f a 4.0-nm-thick CaF2 collector barrier region. Multiple NDR observed here may be attributed to the modulation of the transmission probabili ty of electron waves due to quantum interference in the conduction ban d of the insulator (CaF2) collector barrier layer between two metal (C oSi2) layers, which is a different mechanism from the resonance in qua ntum wells previously reported.