The simultaneous addition of 0.5 at%Ge to the matrix and 1 at%Ta to th
e core enhances the Jc of Nb3Sn at 12T by more than one order of magni
tude. The increase in the Jc seems to be attributed to the grain refin
ement of Nb3Sn by the Ge addition. The formation of thin layer richer
in Ge is observed at the interface between the Nb3Sn and matrix, which
may be effective for reducing the proximity effect among Nb3Sn filame
nts in the AC use. Ultrafine filamentary Nb3Sn wires with Ge addition
to the matrix have been successfully fabricated. The addition of 0.25
at%Ge to the matrix and 1 at%Ta to the core improves the Qh/Jc ratio a
t 0.5 T by a factor of nearly four.