The propagation of heat pulses produced in thin silicon wafers by phot
oexcitation is investigated before and after the YBCO laser ablation.
The Monte-Carlo simulation and analysis of the heat pulse shape led to
conclusion about the introducing into the Si substrate of the accepto
r type additional centers in the process of laser ablation. These cent
ers turn to be phonon scatterers and therefore change the heat transfe
r velocity.