ABSORPTION-COEFFICIENT AND ELECTRIC-FIELD-INDUCED LOCALIZATION IN INAS-ALGASB MULTIQUANTUM-WELL STRUCTURES

Authors
WONG KB GOPIR GKA HAGON JP JAROS M
Citation
Kb. Wong et al., ABSORPTION-COEFFICIENT AND ELECTRIC-FIELD-INDUCED LOCALIZATION IN INAS-ALGASB MULTIQUANTUM-WELL STRUCTURES, Semiconductor science and technology, 9(12), 1994, pp. 2210-2216
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
12
Year of publication
1994
Pages
2210 - 2216
Database
ISI
SICI code
0268-1242(1994)9:12<2210:AAELII>2.0.ZU;2-K
Abstract
We present full-scale calculations of the optical absorption coefficie nt of a type-II InAs-AlGaSb superlattice at wavelengths around 10 mu m . We show that the optical matrix element responsible for such infrare d absorption depends on a delicate balance between the electron-hole w avefunction overlap and the structural parameters. We also present a f ull description of the effect of electric-field-induced localization o n optical spectra in this range of wavelengths.