S. Hatzikonstantinidou et al., PROCESSING AND CHARACTERIZATION OF A PBT DEVICE USING SELF-ALIGNED COSI2, Semiconductor science and technology, 9(12), 1994, pp. 2272-2277
We report the fabrication of an etched-groove permeable base transisto
r (PBT) test structure on silicon, using self-aligned CoSi2 for the ba
se and emitter contacts. This process is fully compatible with a stand
ard CMOS process. The structure has been characterized and simulated.
The simulation results are compared with the measured characteristics
of the fabricated device.