PROCESSING AND CHARACTERIZATION OF A PBT DEVICE USING SELF-ALIGNED COSI2

Authors
HATZIKONSTANTINIDOU S NILSSON HE FROJDH C PETERSSON CS KAPLAN W
Citation
S. Hatzikonstantinidou et al., PROCESSING AND CHARACTERIZATION OF A PBT DEVICE USING SELF-ALIGNED COSI2, Semiconductor science and technology, 9(12), 1994, pp. 2272-2277
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
12
Year of publication
1994
Pages
2272 - 2277
Database
ISI
SICI code
0268-1242(1994)9:12<2272:PACOAP>2.0.ZU;2-2
Abstract
We report the fabrication of an etched-groove permeable base transisto r (PBT) test structure on silicon, using self-aligned CoSi2 for the ba se and emitter contacts. This process is fully compatible with a stand ard CMOS process. The structure has been characterized and simulated. The simulation results are compared with the measured characteristics of the fabricated device.