THE RELATIONSHIP BETWEEN THE FILM PROPERTIES AND THE PREPARATION CONDITIONS FOR A-SI-H GROWN BY HOMOGENEOUS CHEMICAL-VAPOR-DEPOSITION

Authors
TONEVA A MIHAILOVA T DANESH P PANTCHEV B
Citation
A. Toneva et al., THE RELATIONSHIP BETWEEN THE FILM PROPERTIES AND THE PREPARATION CONDITIONS FOR A-SI-H GROWN BY HOMOGENEOUS CHEMICAL-VAPOR-DEPOSITION, Semiconductor science and technology, 9(12), 1994, pp. 2285-2289
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
12
Year of publication
1994
Pages
2285 - 2289
Database
ISI
SICI code
0268-1242(1994)9:12<2285:TRBTFP>2.0.ZU;2-X
Abstract
A study is presented of a-Si:H films prepared by homogeneous chemical vapour deposition (HOMOCVD). a-Si:H is known as a material which is ra ther stable against degradation by light. The effect of deposition con ditions on the parameters characterizing the structural and electronic properties of the films is studied, and two general cases of constant and variable gas-phase conditions were considered. The obtained data suggest that the optoelectronic properties of HOMOCVD a-Si:H are not s trongly related to the structural parameters characterizing the film s tructure on a large scale and a certain decrease in the density and ho mogeneity of the a-Si:H films does not lead to their deterioration.