EFFECT OF HYDROGEN-ION SHOWER DOPING IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

Authors
MISHIMA Y TAKEI M MATSUMOTO N UEMATSU T WAKINO U KAKEHI T OKABE M
Citation
Y. Mishima et al., EFFECT OF HYDROGEN-ION SHOWER DOPING IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Applied physics letters, 66(1), 1995, pp. 31-33
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
1
Year of publication
1995
Pages
31 - 33
Database
ISI
SICI code
0003-6951(1995)66:1<31:EOHSDI>2.0.ZU;2-H