ON THE MOBILITY OF N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS PREPARED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION

Authors
MCLARTY PK MISRA V HILL W WORTMAN JJ HAUSER JR MORFOULI P OUISSE T
Citation
Pk. Mclarty et al., ON THE MOBILITY OF N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS PREPARED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 66(1), 1995, pp. 73-75
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
1
Year of publication
1995
Pages
73 - 75
Database
ISI
SICI code
0003-6951(1995)66:1<73:OTMONM>2.0.ZU;2-0