DOPING OF P-TYPE SHALLOW JUNCTIONS USING ELECTRON-BEAM EVAPORATION OFBORON LAYERS FOR COMPATIBILITY WITH COMPLEMENTARY-METAL-OXIDE SEMICONDUCTOR TECHNOLOGY

Authors
ZAGOZDZONWOSIK W PAN D DAVIS MF RUSAKOVA I ZHANG ZH RHODES K
Citation
W. Zagozdzonwosik et al., DOPING OF P-TYPE SHALLOW JUNCTIONS USING ELECTRON-BEAM EVAPORATION OFBORON LAYERS FOR COMPATIBILITY WITH COMPLEMENTARY-METAL-OXIDE SEMICONDUCTOR TECHNOLOGY, Applied physics letters, 66(1), 1995, pp. 76-78
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
1
Year of publication
1995
Pages
76 - 78
Database
ISI
SICI code
0003-6951(1995)66:1<76:DOPSJU>2.0.ZU;2-P