CHARACTERIZATION OF INGAAS GAAS STRAINED-LAYER QUANTUM-WELLS GROWN ON(311)A GAAS SUBSTRATES/

Authors
TAKAHASHI M VACCARO P FUJITA K WATANABE T
Citation
M. Takahashi et al., CHARACTERIZATION OF INGAAS GAAS STRAINED-LAYER QUANTUM-WELLS GROWN ON(311)A GAAS SUBSTRATES/, Applied physics letters, 66(1), 1995, pp. 93-95
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
1
Year of publication
1995
Pages
93 - 95
Database
ISI
SICI code
0003-6951(1995)66:1<93:COIGSQ>2.0.ZU;2-W