DEPTH PROFILES OF AS ATOMS IMPLANTED INTO TI AND TIO2

The parameters of the depth profiles of As atoms implanted at 40-200 k eV into titanium and titanium oxide were measured using standard RES t echnique. The measured profile moments are compared with theoretical v alues obtained with TRIM 91 program. The experimental projected ranges are by 10-20% lower than the theoretical ones for both substrates. Th e measured range stragglings mostly agree with theoretical predictions with some exceptions where the differences up to 50% are observed. Fo r Ti substrate, significantly slower, in comparison with TRIM predicti on, increase of projected range and range straggling with increasing i mplantation energy is observed.