ION-BEAM DOPING OF GAAS WITH LOW-ENERGY (100-EV) C-BEAM AND MOLECULAR-BEAM EPITAXY( USING COMBINED ION)

Authors
IIDA T MAKITA Y KIMURA S WINTER S YAMADA A FONS P UEKUSA S
Citation
T. Iida et al., ION-BEAM DOPING OF GAAS WITH LOW-ENERGY (100-EV) C-BEAM AND MOLECULAR-BEAM EPITAXY( USING COMBINED ION), Journal of applied physics, 77(1), 1995, pp. 146-152
Citations number
29
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
1
Year of publication
1995
Pages
146 - 152
Database
ISI
SICI code
0021-8979(1995)77:1<146:IDOGWL>2.0.ZU;2-6