GROWTH OF ABRUPT INGAAS(P) IN(GAAS)P HETEROINTERFACES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/

Authors
SHIAU GJ CHAO CP BURROWS PE FORREST SR
Citation
Gj. Shiau et al., GROWTH OF ABRUPT INGAAS(P) IN(GAAS)P HETEROINTERFACES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of applied physics, 77(1), 1995, pp. 201-209
Citations number
31
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
1
Year of publication
1995
Pages
201 - 209
Database
ISI
SICI code
0021-8979(1995)77:1<201:GOAIIH>2.0.ZU;2-P