DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDY IN GETTERED LIQUID-PHASE EPITAXY-GROWN IN0.53GA0.47AS

Authors
PAL D BOSE DN
Citation
D. Pal et Dn. Bose, DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDY IN GETTERED LIQUID-PHASE EPITAXY-GROWN IN0.53GA0.47AS, Journal of applied physics, 77(1), 1995, pp. 210-212
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
1
Year of publication
1995
Pages
210 - 212
Database
ISI
SICI code
0021-8979(1995)77:1<210:DTSSIG>2.0.ZU;2-3