IN-SITU GETTERING OF EDGE-DEFINED FILM-FED GROWTH-SILICON IN A CO AMBIENT

Authors
BALSTER SG SCHRODER DK BAILEY J KALEJS JP
Citation
Sg. Balster et al., IN-SITU GETTERING OF EDGE-DEFINED FILM-FED GROWTH-SILICON IN A CO AMBIENT, Journal of applied physics, 77(1), 1995, pp. 371-377
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
1
Year of publication
1995
Pages
371 - 377
Database
ISI
SICI code
0021-8979(1995)77:1<371:IGOEFG>2.0.ZU;2-T