ELECTRICAL AND OPTICAL-PROPERTIES OF UNDOPED INP GROWN AT LOW-TEMPERATURE BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY

Authors
POSTIGO PA DOTOR ML HUERTAS P GOLMAYO D BRIONES F
Citation
Pa. Postigo et al., ELECTRICAL AND OPTICAL-PROPERTIES OF UNDOPED INP GROWN AT LOW-TEMPERATURE BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY, Journal of applied physics, 77(1), 1995, pp. 402-404
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
1
Year of publication
1995
Pages
402 - 404
Database
ISI
SICI code
0021-8979(1995)77:1<402:EAOOUI>2.0.ZU;2-J