RECRYSTALLIZATION OF STRAINED GEXSI1-X SI LAYERS WITH VARIOUS GE GRADIENTS AND IN THE PRESENCE OF IMPURITIES

Authors
CORNI F TONINI R BALBONI R VESCAN L
Citation
F. Corni et al., RECRYSTALLIZATION OF STRAINED GEXSI1-X SI LAYERS WITH VARIOUS GE GRADIENTS AND IN THE PRESENCE OF IMPURITIES, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 9-13
Citations number
23
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
28
Issue
1-3
Year of publication
1994
Pages
9 - 13
Database
ISI
SICI code
0921-5107(1994)28:1-3<9:ROSGSL>2.0.ZU;2-4
Abstract
The recrystallization of amorphous GexSi1-x thin films on Si with unif orm and with increasing Ge content is studied. The amorphous-crystal i nterface roughness is modified by the presence of C and O impurities b efore entering the GexSi1-x layer. The crystallization kinetics are he avily affected by the resulting interface morphology. A minimum veloci ty is found in the region of the impurities where the interface starts to roughen; the strain effect induced by the Ge within the GexSi1-x i s overcome and the crystallization proceeds according to kinetics very similar to those for pure Si.