EFFECT OF CHEMICAL TREATMENTS ON THE COMPOSITION OF HGZNTE SURFACES

Authors
LEMOINE D KHELLADI KH CASTAING O BENHLAL J QUEMERAIS A POLLINI I TRIBOULET R GRANGER R
Citation
D. Lemoine et al., EFFECT OF CHEMICAL TREATMENTS ON THE COMPOSITION OF HGZNTE SURFACES, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 39-42
Citations number
11
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
28
Issue
1-3
Year of publication
1994
Pages
39 - 42
Database
ISI
SICI code
0921-5107(1994)28:1-3<39:EOCTOT>2.0.ZU;2-V
Abstract
Results bn the study of the surface of Hg0.85Zn0.15Te show a low segre gation of its components and a weakly perturbed lattice after simple c hemical etching processes. The pseudo-dielectric function of this bulk semiconductor and of its anodic oxide is shown. The density of the in terface states in the gap is given for several compositions. The stoic hiometry of the oxidized surface was studied by angle resolved X-ray p hotoelectron spectroscopy. All results are consistent with a higher bo nd stability in mercury zinc telluride than mercury cadmium telluride.