CHARACTERIZATION STUDY OF CDS PASSIVATION LAYERS ON HGXCD1-XTE

Authors
KACIULIS S MATTOGNO G MARINI ME CESQUI F ALFUSO S MERCURI A
Citation
S. Kaciulis et al., CHARACTERIZATION STUDY OF CDS PASSIVATION LAYERS ON HGXCD1-XTE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 43-46
Citations number
14
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
28
Issue
1-3
Year of publication
1994
Pages
43 - 46
Database
ISI
SICI code
0921-5107(1994)28:1-3<43:CSOCPL>2.0.ZU;2-C
Abstract
HgxCd1-xTe epitaxial samples were passivated using an anodic non-aqueo us sulphidation technique. The chemical composition and thickness of t he CdS thin films deposited were investigated by selected-area X-ray p hotoelectron spectroscopy combined with Ar+ ion sputtering. The CdS fi lms formed on HgxCd1-xTe were found to be nearly stoichiometric; their thickness varied with the sulphidation temperature and time. The late ral non-homogeneity of the CdS passivation layers was studied by means of scanning Auger microscopy. The chemical composition and origin of the ''holes'' observed in the CdS films deposited were revealed by the Auger chemical images obtained.