MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF II-VI BLUE-GREEN LASER-DIODES HAVING CONTINUOUS-WAVE OPERATION AT ROOM-TEMPERATURE

Authors
RINGLE MD GRILLO DC FAN Y HE L HAN J GUNSHOR RL SALOKATVE A JEON H HOVINEN M NURMIKKO AV HUA GC OTSUKA N
Citation
Md. Ringle et al., MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF II-VI BLUE-GREEN LASER-DIODES HAVING CONTINUOUS-WAVE OPERATION AT ROOM-TEMPERATURE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 51-54
Citations number
14
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
28
Issue
1-3
Year of publication
1994
Pages
51 - 54
Database
ISI
SICI code
0921-5107(1994)28:1-3<51:MEACOI>2.0.ZU;2-U
Abstract
Continuous-wave laser operation at room temperature was obtained from a (Zn,Mg)(S,Se)-based II-VI separate-confinement heterostructure where injection of holes into the p-type quaternary was achieved through th e employment of a Zn(Se,T) graded-bandgap contact. The laser devices e xhibit threshold current densities of below 300 A cm(-2) and voltages below 6 V. Issues related to the control of the growth of the quaterna ry (Zn,Mg)(S,Se) compound are discussed and comments are made on the o rigins of device degradation.