UNDOPED GAAS GROWN BY THE VERTICAL GRADIENT FREEZE METHOD - GROWTH AND PROPERTIES

Authors
BUHRIG E FRANK C GARTNER G HEIN K KLEMM V KUHNEL G VOLAND U
Citation
E. Buhrig et al., UNDOPED GAAS GROWN BY THE VERTICAL GRADIENT FREEZE METHOD - GROWTH AND PROPERTIES, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 87-90
Citations number
13
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
28
Issue
1-3
Year of publication
1994
Pages
87 - 90
Database
ISI
SICI code
0921-5107(1994)28:1-3<87:UGGBTV>2.0.ZU;2-S
Abstract
Undoped GaAs crystals were grown by the vertical gradient freeze techn ique in a multizone furnace. By optimization of the growth equipment a nd the thermodynamic conditions, crystals were obtained with a low den sity of microdefects and dislocations (etch pits density about 10(3) c m(-2)) as wells as semi-insulating behaviour. Residual impurities and defect levels were investigated by optical (local vibrational-mode and IR absorption) and Hall effect measurements.