NONUNIFORMITY OF FE DOPING IN SEMIINSULATING LEC-GROWN INP AND ITS CHARACTERIZATION BY VARIOUS MAPPING METHODS

Authors
SEIDL A MOSEL E MULLER G
Citation
A. Seidl et al., NONUNIFORMITY OF FE DOPING IN SEMIINSULATING LEC-GROWN INP AND ITS CHARACTERIZATION BY VARIOUS MAPPING METHODS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 107-110
Citations number
10
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
28
Issue
1-3
Year of publication
1994
Pages
107 - 110
Database
ISI
SICI code
0921-5107(1994)28:1-3<107:NOFDIS>2.0.ZU;2-K
Abstract
Lateral non-uniformity of wafers from liquid encapsulated Czochralski- grown Fe-doped InP was studied by near-infrared absorption spectroscop y (Fe distribution), the time-dependent charge measurement technique ( resistivity topography and photoluminescence (striations). The experim ental results were compared with models of the Fe segregation in InP. Increased dopant incorporation in the central part of the crystal is e xplained by the effect of a non-uniform solute boundary layer and by u sing an advanced model of the effective segregation coefficient.