PHOTOCURRENT STUDY OF FE-DOPED SEMIINSULATING INP

Authors
AVELLA M JIMENEZ J ALVAREZ A GONZALEZ MA SANZ LF
Citation
M. Avella et al., PHOTOCURRENT STUDY OF FE-DOPED SEMIINSULATING INP, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 111-114
Citations number
13
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
28
Issue
1-3
Year of publication
1994
Pages
111 - 114
Database
ISI
SICI code
0921-5107(1994)28:1-3<111:PSOFSI>2.0.ZU;2-E
Abstract
Fe distribution is studied in semi-insulating liquid-encapsulated Czoc hralski (LEC) Fe-doped InP, by means of spatially resolved photocurren t measurements. Local fluctuations of the extrinsic photocurrent are r elated to Fe distribution inhomogeneities, which are related to the di slocation atmospheres. The electronic transitions involved are modelle d by a set of rate equations. The theoretical model gives an excellent fit of the experimental data, thus allowing us to obtain an estimatio n of the local Fe3+ concentration, which can fluctuate by up to 15% of the average concentration.