COPPER DOPING OF GASB SINGLE-CRYSTALS

Authors
SESTAKOVA V STEPANEK B
Citation
V. Sestakova et B. Stepanek, COPPER DOPING OF GASB SINGLE-CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 138-141
Citations number
27
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
28
Issue
1-3
Year of publication
1994
Pages
138 - 141
Database
ISI
SICI code
0921-5107(1994)28:1-3<138:CDOGS>2.0.ZU;2-I
Abstract
For GaSb single crystals doped with copper (grown using the Czochralsk i method without encapsulant in a flowing atmosphere of hydrogen), the distribution coefficient of copper in GaSb was found to be k(eff) = 0 .0021 +/- 0.0006; the solubility of copper in GaSb is discussed. The r egion of copper solubility in GaSb was analysed on a thermodynamic bas is using chemical phase diagrams for the Sb-Ga-Cu system. Owing to the low solubility of copper, its excessive amount in GaSb probably cause d an increase of the dislocation density at the end of the GaSb single crystals.